| 元件型号: | SI5411EDUT1GE3 |
| 产品名称: | SI5411EDUT1GE3 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | SI5411EDUT1GE3 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Vishay Siliconix |
| 描述: | MOSFET P-CH 12V 25A PPAK CHIPFET |
| 系列: | TrenchFET |
| 包装: | Tape & Reel (TR) |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 12V |
| 电流 - 连续漏极 (Id) @ 25°C: | 25A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | 1.8V, 4.5V |
| Vgs(th)（最大值）@Id: | 900mV @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 105nC @ 8V |
| 输入电容 (Ciss)（最大值）@Vds: | 4100pF @ 6V |
| Vgs（最大）: | ±8V |
| 场效应管特性: | - |
| 功耗（最大）: | 3.1W (Ta), 31W (Tc) |
| Rds On（最大）@Id、Vgs: | 8.2 mOhm @ 6A, 4.5V |
| 工作温度: | -50°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK ChipFet Single |
| 包装/箱: | PowerPAK ChipFET,Single |
元件型号
品牌
生产日期
数量
SI5411EDU-T1-GE3 VISHAY 2022
VISHAY
2022
35631
USD 0
SI5411EDU-T1-GE3
Vishay Siliconix
Vishay Siliconix
421
USD 0
SI5411EDU-T1-GE3 Vishay 18+
Vishay
18+
33240
USD 0
SI5411EDU-T1-GE3 VISHAY 18+
VISHAY
18+
24000
USD 0
SI5411EDU-T1-GE3 VISHAY 21+
VISHAY
21+
7000
USD 0
SI5411EDU-T1-GE3 VISHAY 2022
VISHAY
2022
35631
USD 0
SI5411EDU-T1-GE3
Vishay Siliconix
Vishay Siliconix
421
USD 0
SI5411EDU-T1-GE3 Vishay 18+
Vishay
18+
33240
USD 0
SI5411EDU-T1-GE3 VISHAY 18+
VISHAY
18+
24000
USD 0
SI5411EDU-T1-GE3 VISHAY 21+
VISHAY
21+
7000
USD 0
| 
