| 元件型号: | IPD60R650CEATMA1 |
| 产品名称: | IPD60R650CEATMA1 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | IPD60R650CEATMA1 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Infineon Technologies |
| 描述: | MOSFET N-CH 600V TO-252-3 |
| 系列: | CoolMOS,CE |
| 包装: | Cut Tape (CT) |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 600V |
| 电流 - 连续漏极 (Id) @ 25°C: | 7A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 3.5V @ 200µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 20.5nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 440pF @ 100V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 63W (Tc) |
| Rds On（最大）@Id、Vgs: | 650 mOhm @ 2.4A, 10V |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252-3 |
| 包装/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
元件型号
品牌
生产日期
数量
IPD60R650CEATMA1 N/A
N/A
5000
USD 0
IPD60R650CEATMA1 INFINEON 15+
INFINEON
15+
4500
USD 0
IPD60R650CEATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPD60R650CEATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPD60R650CEATMA1 N/A
N/A
5000
USD 0
IPD60R650CEATMA1 INFINEON 15+
INFINEON
15+
4500
USD 0
IPD60R650CEATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPD60R650CEATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
| 
